1System operating pointThe inverter's DC-side operating point. Modulation index M is the space-vector depth (≈ V_phase,pk/(V_dc/2), up to ~1.15); the ripple current peaks near M ≈ 0.6. Cable inductance is the DC-side stray/loop inductance between the source and the capacitor. Switch to "Known capacitance" if you already have the required capacitance and ripple current and just want the bank/thermal/optimiser sizing.
Effective floor: 404 V (peak 404 V). Catalog voltage options and the optimiser are restricted to this range.
2Capacitor selectionDown-select a metallized-polypropylene film DC-link capacitor by supplier, series, voltage and part, or switch to Custom to enter your own C, ESR, Rth, Irms rating, box dimensions and a reference part number.
3Cooling & layoutThe datasheet Rth is for a single, freely-cooled part. In a parallel array the most-enclosed capacitor loses cooling area to its neighbours, so its effective Rth is derated by the exposed-face fraction (wider spacing helps). Choose a cooling method and the array geometry.
Auto uses a near-square grid (⌈√N⌉).
2–4 mm typical.
4Package optimizerSearch the whole capacitor database for the smallest bank that meets the required capacitance and ripple current and stays under a hot-spot-temperature target, while fitting inside a bounding envelope. Each candidate part is sized to its minimum feasible parallel count (raised only if needed to stay cool) in the most compact grid that fits.
5Switching overshootAt turn-off the device current collapses at a rate di/dt; the commutation-loop inductance L_loop produces a spike ΔV = L·di/dt on top of the DC bus. The device sees the full loop spike; the capacitor sees only the part across its own ESL. L_loop can be entered directly or estimated from a laminated busbar's geometry plus the module and cap-bank ESL.
Busbar + module + cap-bank ESL. Well-laminated EV inverter loops are ~10–30 nH.
Peak phase ≈ 283 A.
SiC ~20–50 ns, IGBT ~100–300 ns.
Results
✓ Within limits — 2 advisory notes
⚠ Voltage derating
→ Peak voltage 404 V is above 80% of the 500 V rating — within limits (surge to 1.5×V_rated is allowed only occasionally), but film-cap life is much longer at ≤0.8×V_rated.
⚠ Cable resonance
→ LC resonance 6,291 Hz is within a factor of 3 of the 10,000 Hz switching frequency — add margin (more capacitance) to avoid exciting it.
DC-link ripple currentRMS current the capacitor bank must carry (Kolar & Round). This, not capacitance, usually sets the part count.
112A
0.56 × phase current
Required capacitance
630µF
governed by voltage ripple
Peak capacitor voltageDC bus + ½ the pk-pk ripple. The datasheets require the peak voltage (DC + superimposed ripple) to stay within the rated voltage — so the ripple pushes the required voltage rating up, not just the DC bus.
404V
400 V bus + 4 V · rating 500 V
Capacitors in parallel
8×80µF
= 640 µF · capacitance-limited
Loss (total)
2.8W
0.35 W/cap · 14 A/cap
Worst hot-spot temp
80°C
+10°C rise · Rth,eff 26.9 °C/W
Expected life
42.1yr
368,803 h · Excellent
Bank layout & envelope
W = 132 mmD = 111 mm3×3 grid · 8 caps · gap 3 mmplan view · standing height H = 46 mm · red = worst-case (hottest) position
Grid3 rows × 3 cols (8 caps, last row 2)
Envelope W × D × H132 × 111 × 46 mm
Worst-case cap cooling2.6 of 5 faces exposed → Rth ×1.92
Bank ESR / ESL0.225 mΩ / 1.6 nH (N in parallel; interconnect/busbar adds to ESL)
Estimated bank mass730 g (0.73 kg) ≈ box volume × 1.35 g/cm³
Total stored energy51.2 J
Switching overshootΔV = L_loop·di/dt. The device sees the full loop spike (compare against your switch's voltage rating); the capacitor sees only ESL_bank·di/dt on top of the DC bus and ripple. This repeats every cycle, so the cap-terminal peak must stay within the rating.
di/dt9,433 A/µs (9.4 kA/µs)
Commutation-loop inductance30 nH
Device-side overshoot ΔV283 V → peak 683 V (vs your switch rating)
Cap-terminal peak (repetitive)419 V = bus + ½ ripple + 15 V ESL spike · rating 500 V
The device-side overshoot sizes the switch/module voltage margin (out of scope here); the cap only sees the ESL·di/dt part. Minimise L_loop with a low-inductance laminated busbar and place the caps close to the switches.
Reference & assumptions

New to DC-Link Ripple? Read the guide: DC-Link Capacitor Ripple: The Kolar & Round Method — a plain-language explainer of the standard behind this calculator.

Voltage rating: the capacitor's rated voltage is a PEAK limit for the (non-reversing) DC-link waveform — the KEMET datasheet states "the peak voltage shall not exceed the rated voltage VNDC," and TDK defines its rated voltage as the maximum operating peak voltage. So the governing voltage is V_peak = V_bus + ½·ΔV_pp (the ripple pushes the required rating up, not just the DC bus), and above 85 °C the permissible voltage derates below the rating (linear to ~0.7×V_rated at 105 °C). Occasional surges to ~1.5×V_rated are allowed (limited cycles), but continuous operation at ≤0.8×V_rated greatly extends life. Bank mass is estimated from the box envelope volume at an effective packaged density of 1.35 g/cm³ (film + resin + box + terminals) — an approximation; use the datasheet weight for precise figures. Bank ESR and ESL are the N-in-parallel combinations of the per-part values; real bank ESL is dominated by the busbar/interconnect layout, which is not included. Switching overshoot uses ΔV = L_loop·di/dt: the commutation-loop inductance (entered, or estimated from a laminated busbar as µ₀·separation·length/width plus the module and cap-bank ESL) times the turn-off current slew (from the commutated current and fall time, or entered directly). The device sees the full loop spike (compare against the switch's rating — out of scope here); the capacitor sees only the ESL_bank·di/dt portion added to the DC bus and ripple, and because it repeats every cycle it must stay within the rated voltage. This is a first-order lumped estimate — real overshoot also depends on damping, gate drive and ringing. The DC-link RMS ripple current uses the Kolar & Round closed-form expression (IEE Proc. Electr. Power Appl., 2006, Eq. 28) for a three-phase voltage-source PWM inverter with sinusoidal output current and a constant DC-link voltage; it peaks near modulation index M ≈ 0.6 at roughly 0.6–0.65 × the RMS phase current. The sizing capacitance is the larger of two constraints: the switching-ripple-voltage limit (treating the capacitor reactance as the dominant impedance at f_sw, so C = I_C,rms/(2π·f_sw·V_rip,rms) with V_rip,rms = ΔV_pp/(2√2) — conservative, since all the ripple is taken at the switching frequency), and the source-decoupling minimum C ≥ 1/(L_cable·(2π·f_sw)²) that keeps the cable-inductance/capacitor resonance below the switching frequency. Capacitor loss is P = ESR·I² with the ripple current shared equally across the parallel bank; the hot-spot temperature is ΔT = ESR·I²·R_th (per the KEMET C4AQ-M datasheet), with the single-part R_th derated for the most-enclosed capacitor by its exposed-face fraction (top face plus side faces, side faces facing a neighbour across the gap cooling only partially) and a cooling-method factor (natural / forced air / conduction). ESR is frequency- and temperature-dependent — the datasheet 10 kHz / 70 °C value is used, so real losses vary with the actual ripple spectrum. Expected life uses a PP-film model anchored to the C4AQ-M datasheet — 120,000 h at rated voltage at 70 °C hot spot, halving every ~15 °C (60,000 h at 85 °C), with a (V_rated/V_applied)^7 voltage-acceleration factor — and is a first-order estimate; the manufacturer's lifetime curve for the specific series governs. Capacitor parameters are transcribed from the manufacturer datasheets — KEMET C4AQ-M (F3125), KEMET C4AE (F3046) and TDK/EPCOS B3277x MKP DC-Link (MKP_B32774XYZ_778XYZ). Note the Irms rating basis differs by manufacturer: KEMET quotes the current for a 30 °C hot-spot rise, TDK for a 15 °C rise; the TDK parts' R_th is derived from R_th = ΔT/(ESR·Irms²) with ΔT = 15 °C (which cross-checks against KEMET for matching case sizes). The voltage-derating and life models are generic PP-film approximations. Verify against the current datasheets and, for critical designs, by test.

Validated: the Kolar & Round ripple-current formula was independently re-derived and matched exactly, and sweeping the modulation index at unity power factor confirms the well-known published characteristic stated above — the ratio peaks at M = 0.615 with a value of 0.650, right in the documented "M ≈ 0.6, ~0.6–0.65×" range. LC resonance, both capacitance-sizing constraints, stored energy, busbar loop inductance, and the di/dt and overshoot formulas all matched independent hand calculation exactly.

Calculation steps
1. DC-link RMS ripple current (Kolar & Round, Eq. 28)
I_C,rms = I_ph,rms·√{ 2M·[ √3/(4π) + cos²φ·(√3/π − 9M/16) ] }
I_ph = 200 A rms, M = 0.9, cos φ = 0.9
I_C,rms = 112 A (0.56 × phase current)
2. Capacitance for switching-ripple voltage
C = I_C,rms / (2π·f_sw·V_rip,rms), V_rip,rms = ΔV_pp/(2√2)
f_sw = 10 kHz, ΔV_pp = 8 V
C(ripple) = 630 µF
3. Source-decoupling minimum (cable inductance)
C ≥ 1/(L_cable·(2π·f_sw)²) keeps the LC resonance below f_sw
L_cable = 1 µH
C(decoupling) = 253 µF → required = 630 µF (governed by voltage ripple)
4. Capacitor count and loss
N = max(⌈C_req/C_cap⌉, ⌈I_C,rms/I_rms,cap⌉), P_cap = ESR·(I_C,rms/N)²
C_cap = 80 µF, ESR = 1.8 mΩ, I_rms,cap = 32.4 A
N = 8 (8 for C, 4 for current), 14 A/cap, 0.35 W/cap
5. Hot-spot temperature (worst, most-enclosed cap)
R_th,eff = R_th·(5/exposed faces)·cooling, T_HS = T_amb + P_cap·R_th,eff
R_th = 14 °C/W, exposed faces ≈ 2.6/5, cooling = Natural convection, T_amb = 70°C
R_th,eff = 26.9 °C/W → T_HS = 80°C (10°C rise)
6. Expected life (PP-film model)
L = 120 000 h · 2^((70−T_HS)/15) · (V_rated/V_bus)^7
T_HS = 80°C, V_bus = 400 V, V_rated = 500 V
L ≈ 368,803 h (42.1 years) — Excellent
7. Switching overshoot
ΔV = L_loop·di/dt (device), cap-terminal spike = ESL_bank·di/dt
L_loop = 30 nH, ESL_bank = 1.6 nH, di/dt = 9,433 A/µs
Device peak 683 V (bus + 283 V); cap-terminal peak 419 V